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Infineon Technologies IPD320N20N3GATMA1

Infineon IPD320N20N3GATMA1 N-Channel MOSFET, 200 V, 34 A

MPNIPD320N20N3GATMA1
End of Life

Infineon OptiMOS IPD320N20N3GATMA1, N-Channel MOSFET, 200 V Vdss, 34 A continuous drain, 32 mOhm Rds(on) max at 10 V, 29 nC gate charge, TO-252-3 (DPak) surface-mount package, -55 to 175 °C junction temperature.

$3.12Ref. price · indicative, final on quote
Infineon Technologies IPD320N20N3GATMA1 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPD320N20N3GATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C34A (Tc)
Power dissipation136W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 90µA
Rds on (Max) @ id, vgs32mOhm @ 34A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2350 pF @ 100 V

Product details

200 V, 34 A N-channel — the Rds(on) that sets the thermal budget

For a 48 V telecom brick or a 72 V battery-powered auxiliary converter, this Rds(on) class keeps the TO-252 package's 136 W power dissipation ceiling in play without pushing into the derating curve prematurely.

Gate charge and switching — 29 nC at 10 V

The input capacitance Ciss of 2350 pF at 100 V Vds gives a rough Miller plateau charge of about 10 nC, so the driver's peak current capability matters more for the turn-on/turn-off edges than the average current. Design the gate-drive loop with a 10 V rail and a low-inductance path to the TO-252 source tab.

175 °C junction — headroom for constrained airflow

For a power MOSFET in a TO-252 (DPak) surface-mount package, that 175 °C ceiling is the key derating parameter: at 100 °C ambient with minimal forced air, the allowable power dissipation drops from the 136 W Tc-rated maximum to roughly 60–70 W depending on the board copper area under the tab.

It is ROHS3 compliant. No official second-source or direct replacement is listed on the Infineon cross-reference, so dual-sourcing requires a parametric search for a 200 V, 34 A, 32 mOhm N-channel in a compatible DPak footprint.

Frequently asked questions

What is the Rds(on) of IPD320N20N3GATMA1?

The maximum on-resistance is 32 mOhm at a drain current of 34 A and a gate-source voltage of 10 V. This is the worst-case value at 25 °C junction temperature; actual Rds(on) increases with temperature per the normalised curve in the datasheet.

Is IPD320N20N3GATMA1 RoHS compliant?

Yes, the part is ROHS3 compliant per the Infineon lifecycle record.

What is the equivalent or second-source for IPD320N20N3GATMA1?

No official Infineon cross-reference or second-source is listed for this MPN. The peer IPD50R950CEAUMA1 is a 500 V, 4.3 A CoolMOS device with a different voltage and current class — it is not a functional replacement. For dual-sourcing, search for a 200 V, 34 A, 32 mOhm N-channel MOSFET in a TO-252 package.