Conduction loss and switching budget
The IPD30N12S3L31ATMA1: The gate charge is 24 nC at 10 V.
Temperature envelope and package
Maximum power dissipation is 57 W, derated above 25°C case temperature per the datasheet curve.
Infineon IPD30N12S3L31ATMA1 N-Channel MOSFET, 120 V, 30 A
MPNIPD30N12S3L31ATMA1
End of Life
Infineon IPD30N12S3L31ATMA1, N-Channel Automotive MOSFET, 120 V Vdss, 30 A Id, 31 mOhm Rds(on) at 10 V, AEC-Q101, PG-TO252-3-11 package, -55°C to 175°C.
$1.13Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Series*
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | * |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 120 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 30A (Tc) |
| Power dissipation | 57W |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2.4V @ 29µA |
| Rds on (Max) @ id, vgs | 31mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 24 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1970 pF @ 25 V |
Product details
Frequently asked questions
What is the Rds(on) of the IPD30N12S3L31ATMA1?
The drive voltage for achieving the rated on-resistance is 10 V; a 4.5 V drive is also specified but yields higher resistance.