100 V, 30 A N-channel — what it handles
Switching and drive — what the gate charge tells you
Gate charge is 31 nC at 10 V.
Infineon IPD30N10S3L34ATMA1 N-Channel MOSFET, 100V 30A
MPNIPD30N10S3L34ATMA1
End of Life
Infineon OptiMOS™ IPD30N10S3L34ATMA1, N-Channel MOSFET, 100 V drain-source, 30 A continuous drain, 31 mOhm Rds(on) at 10 V, 31 nC gate charge, surface-mount TO-252-3 (DPak), -55°C to 175°C junction temperature.
$1.38Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 30A (Tc) |
| Power dissipation | 57W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2.4V @ 29µA |
| Rds on (Max) @ id, vgs | 31mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 31 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1976 pF @ 25 V |
Product details
Frequently asked questions
Does IPD30N10S3L34ATMA1 have a lead-free (RoHS) version?
Yes, it is ROHS3 compliant, which is the current RoHS exemption-free standard.