Infineon Technologies · OptiMOS™ Series
Infineon OptiMOS IPD30N08S2L21ATMA1, N-Channel MOSFET, 75 V Vdss, 30 A Id, 20.5 mOhm Rds(on) at 10 V, PG-TO252-3-11 package, surface mount, -55 to 175 °C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 75 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 30A (Tc) |
| Power dissipation | 136W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2V @ 80µA |
| Rds on (Max) @ id, vgs | 20.5mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 72 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1650 pF @ 25 V |
Gate charge is 72 nC at 10 V, and input capacitance is 1650 pF at 25 V drain — a standard gate driver with 1 A peak output can switch it in the 50–100 kHz range without excessive drive loss. The 2 V maximum gate threshold at 80 µA drain current means the device is fully off below 2 V, but the 4.5 V drive voltage for minimum Rds(on) lets it work from a 5 V logic rail if the gate driver can source the charge.
