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Infineon Technologies IPD30N06S4L23ATMA2

Infineon IPD30N06S4L23ATMA2 N-Channel MOSFET, 60V 30A, DPAK

MPNIPD30N06S4L23ATMA2
End of Life

Infineon OptiMOS™ IPD30N06S4L23ATMA2, N-Channel MOSFET, 60 V drain-source, 30 A continuous drain, 23 mOhm Rds(on) at 10 V, AEC-Q101 qualified, PG-TO252-3-11 (DPAK) package.

$1.08Ref. price · indicative, final on quote
Infineon Technologies IPD30N06S4L23ATMA2 datasheet (PDF)
PackagingTO-252-3, DPAK (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPD30N06S4L23ATMA2 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation36W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.2V @ 10µA
Rds on (Max) @ id, vgs23mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs21 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1560 pF @ 25 V

Product details

Automotive-grade 60 V N-channel in a DPAK

It is qualified to AEC-Q101, making it a fit for automotive and other high-reliability environments where the part must survive under-hood temperature swings and vibration.

The gate charge of 21 nC at 10 V keeps switching losses manageable for PWM frequencies up to several tens of kilohertz, depending on the driver's sourcing capability.

175 °C junction — built for the engine bay

The junction temperature range extends from -55 °C to 175 °C, which covers the full automotive temperature envelope including cold-crank and under-hood soak conditions.

Frequently asked questions

Is IPD30N06S4L23ATMA2 automotive qualified?

Yes, it is AEC-Q101 qualified and carries an Automotive grade designation, making it suitable for automotive applications.