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Infineon Technologies IPD30N06S2L23ATMA3

IPD30N06S2L23ATMA3 N-Channel MOSFET, 55V 30A, 23mOhm Rds(on)

MPNIPD30N06S2L23ATMA3
End of Life

Infineon OptiMOS IPD30N06S2L23ATMA3, N-Channel MOSFET, 55 V Vdss, 30 A Id, 23 mOhm Rds(on) @ 22 A, 10 V, PG-TO252-3-11 package, -55 to 175 °C.

$1.62Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD30N06S2L23ATMA3 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation100W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2V @ 50µA
Rds on (Max) @ id, vgs23mOhm @ 22A, 10V
Gate charge (Qg) (Max) @ vgs42 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1091 pF @ 25 V

Product details

Gate charge and switching speed

Total gate charge is 42 nC at 10 V, and input capacitance is 1091 pF at 25 V drain-source. For a 100 kHz hard-switched converter the gate drive needs to source about 4.2 A peak to hit the target rise time; a typical 2 A driver will be marginal at higher frequencies.

175 °C junction — wider thermal headroom

This buys margin in high-ambient environments such as under-hood automotive or industrial motor drives where the case temperature runs above 100 °C.

The part is ROHS3 compliant.

Frequently asked questions

Is IPD30N06S2L23ATMA3 obsolete or end of life?

No.