55 V, 30 A N-channel — the OptiMOS workhorse in TO-252
The Infineon IPD30N06S223ATMA2 is an N-channel enhancement-mode MOSFET from the OptiMOS™ series, built on a trench-based metal-oxide semiconductor process. At 30 A the I²R loss reaches about 21 W at the rated Rds(on) — the 100 W power-dissipation ceiling at the case provides roughly 4× derating headroom when the junction is held at 25 °C.
Gate charge and switching speed — 32 nC at 10 V
Total gate charge is 32 nC at 10 V gate drive. For a 100 kHz switching frequency the average gate-drive current is 3.2 mA — well within the capability of a standard MOSFET driver IC. The 901 pF input capacitance at 25 V drain bias confirms the gate is not excessively large, so the switching losses stay manageable in hard-switched topologies. The 4 V maximum gate-threshold voltage at 50 µA drain current means the device is fully enhanced only when the gate is driven above 10 V. A 5 V logic-level gate signal will not turn it on hard enough to reach the rated Rds(on); the design should budget a 10 V gate rail or a dedicated gate-driver IC.
Thermal and environmental range — 175 °C junction
The operating junction temperature spans -55 °C to 175 °C. The 175 °C ceiling is typical for automotive-grade power MOSFETs and gives margin in under-hood or industrial enclosures where ambient temperatures exceed 85 °C. The 100 W power dissipation at the case assumes an infinite heatsink; real-world derating depends on the PCB copper area on the TO-252 drain tab. The PG-TO252-3-11 (DPak) package is a surface-mount footprint with a large exposed drain pad. The tab is the primary thermal path — the board layout must connect it to a copper pour of at least 600 mm² to keep the junction below 125 °C at 30 A continuous.
Active production — no last-time-buy risk
Infineon lists it as current production with ROHS3 compliance.