IPD30N06S215ATMA2 - Infineon Technologies
MPNIPD30N06S215ATMA2
End of Life
MOSFET N-CH 55V 30A TO252-31
$1.51Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 30A (Tc) |
| Power dissipation | 136W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 80µA |
| Rds on (Max) @ id, vgs | 14.7mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 110 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1485 pF @ 25 V |