Gate charge and switching — 14 nC keeps the driver happy
The IPD30N03S4L14ATMA1: Total gate charge is 14 nC at 10 V. Input capacitance is 980 pF at 25 V.
Thermal headroom — 175°C junction buys margin
Maximum power dissipation is 31 W at the case.
IPD30N03S4L14ATMA1 N-Channel MOSFET, 30V 30A, TO-252-3
MPNIPD30N03S4L14ATMA1
End of Life
Infineon OptiMOS series, IPD30N03S4L14ATMA1, N-channel MOSFET, 30V Vdss, 30A Id, 13.6mOhm Rds(on) at 10V, 14nC Qg, TO-252-3 (DPak) surface mount, -55°C to 175°C junction.
$0.92Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 30A (Tc) |
| Power dissipation | 31W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2.2V @ 10µA |
| Rds on (Max) @ id, vgs | 13.6mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 14 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 980 pF @ 25 V |
Product details
Frequently asked questions
What compliance documentation is available for this part?
The part is ROHS3 compliant. Infineon provides the standard EU Declaration of Conformity and material composition declarations for the OptiMOS series through their product support portal.