Infineon OptiMOS series, IPD30N03S4L14ATMA1, N-channel MOSFET, 30V Vdss, 30A Id, 13.6mOhm Rds(on) at 10V, 14nC Qg, TO-252-3 (DPak) surface mount, -55°C to 175°C junction.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 30A (Tc) |
| Power dissipation | 31W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2.2V @ 10µA |
| Rds on (Max) @ id, vgs | 13.6mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 14 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 980 pF @ 25 V |
The IPD30N03S4L14ATMA1: Total gate charge is 14 nC at 10 V. Input capacitance is 980 pF at 25 V.
Junction temperature range is -55°C to 175°C. Maximum power dissipation is 31 W at the case.
The part is ROHS3 compliant. Infineon provides the standard EU Declaration of Conformity and material composition declarations for the OptiMOS series through their product support portal.