55 V / 30 A N-Channel OptiMOS™ — conduction loss and thermal budget
The Infineon IPD26N06S2L35ATMA2 is an N-Channel enhancement-mode MOSFET from the OptiMOS™ series, housed in a PG-TO252-3-11 (DPak) surface-mount package. The 35 mOhm maximum on-resistance, specified at 13 A drain current and 10 V gate drive, sets the conduction loss floor for a given load current — a key parameter when sizing the PCB copper area and heatsink for the 68 W maximum power dissipation.
With a maximum gate charge of 24 nC at 10 V, the IPD26N06S2L35ATMA2 requires moderate drive current from the gate driver — a 10 V supply delivering 24 nC per switching cycle keeps the driver's average current under 2.4 mA at 100 kHz, well within the capability of most integrated MOSFET drivers. The 621 pF input capacitance at 25 V drain-source confirms the driver's peak current must be sized to charge this capacitance quickly to minimise switching losses. The 2 V maximum gate threshold at 26 µA drain current means the device can be driven from logic-level sources at 4.5 V (the lower drive voltage listed), though the 35 mOhm Rds(on) is guaranteed only at 10 V Vgs. For designs using a 4.5 V gate drive, expect higher on-resistance — factor that into the conduction loss estimate.
175 °C junction rating and active lifecycle
The -55 °C to 175 °C operating junction temperature range exceeds the typical 150 °C limit of many power MOSFETs, giving additional thermal margin in under-hood automotive or high-ambient industrial enclosures. The 175 °C ceiling means the 30 A continuous current rating at 25 °C case temperature must be derated per the datasheet's thermal impedance curve at higher Tcase. It is RoHS3 compliant.