55 V / 30 A N-Channel OptiMOS™ — conduction loss and thermal budget
The Infineon IPD26N06S2L35ATMA2 is an N-Channel enhancement-mode MOSFET from the OptiMOS™ series, housed in a PG-TO252-3-11 (DPak) surface-mount package.
With a maximum gate charge of 24 nC at 10 V, the IPD26N06S2L35ATMA2 requires moderate drive current from the gate driver — a 10 V supply delivering 24 nC per switching cycle keeps the driver's average current under 2.4 mA at 100 kHz, well within the capability of most integrated MOSFET drivers. The 2 V maximum gate threshold at 26 µA drain current means the device can be driven from logic-level sources at 4.5 V (the lower drive voltage listed), though the 35 mOhm Rds(on) is guaranteed only at 10 V Vgs. For designs using a 4.5 V gate drive, expect higher on-resistance — factor that into the conduction loss estimate.
175 °C junction rating and active lifecycle
The -55 °C to 175 °C operating junction temperature range exceeds the typical 150 °C limit of many power MOSFETs, giving additional thermal margin in under-hood automotive or high-ambient industrial enclosures. The 175 °C ceiling means the 30 A continuous current rating at 25 °C case temperature must be derated per the datasheet's thermal impedance curve at higher Tcase. It is RoHS3 compliant.