Infineon OptiMOS™ IPD25DP06NMATMA1, P-Channel MOSFET, 60 V Vdss, 6.5 A continuous drain, 250 mOhm Rds(on) at 10 V, TO-252-3 (DPak), -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6.5A (Tc) |
| Power dissipation | 28W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 270µA |
| Rds on (Max) @ id, vgs | 250mOhm @ 6.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 10.6 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 420 pF @ 30 V |
Total gate charge is 10.6 nC at 10 V, and input capacitance is 420 pF at 30 V drain-source.
For REACH or UL documentation, the manufacturer's compliance portal is the source; the part itself carries no separate UL or IEC mark in the listing.
No. The IPD50R950CEAUMA1 is an N-channel 500 V MOSFET; the IPD25DP06NMATMA1 is a P-channel 60 V device. Although both use a TO-252-3 footprint, the gate-drive polarity and pin assignments are different — the board would need a layout change and a different gate-drive circuit.