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Infineon Technologies IPD22N08S2L50ATMA1

Infineon IPD22N08S2L50ATMA1 N-Channel MOSFET, 75V 27A

MPNIPD22N08S2L50ATMA1
End of Life

Infineon OptiMOS™ IPD22N08S2L50ATMA1 N-Channel MOSFET, 75 V drain-source, 27 A continuous drain, 50 mOhm Rds(on) at 10 V, TO-252-3 (DPak) surface-mount package, -55°C to 175°C junction temperature.

$1.25Ref. price · indicative, final on quote
Infineon Technologies IPD22N08S2L50ATMA1 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPD22N08S2L50ATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C27A (Tc)
Power dissipation75W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2V @ 31µA
Rds on (Max) @ id, vgs50mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs33 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds630 pF @ 25 V

Product details

75 V, 27 A N-channel — what this OptiMOS™ part delivers

It comes in a TO-252-3 (DPak) surface-mount package, a standard footprint for medium-power switching and load-switching applications. The 50 mOhm maximum on-resistance at 10 V gate drive keeps conduction losses manageable for a 75 V device, and the 33 nC gate charge at 10 V means a standard gate driver can switch it without excessive drive current.

Package and mounting — DPak fits standard reflow

The TO-252-3 (DPak) package (supplier device package PG-TO252-3-11) is a surface-mount DPAK with two leads and a tab. The tab is the drain connection and carries heat to the PCB copper.

It is ROHS3 compliant.

The product status is active.

Frequently asked questions

Does IPD22N08S2L50ATMA1 have RoHS compliance?

Yes, it is ROHS3 compliant.