75 V, 27 A N-channel — what this OptiMOS™ part delivers
The Infineon IPD22N08S2L50ATMA1 is an N-channel enhancement-mode MOSFET from the OptiMOS™ series, rated for 75 V drain-source voltage and 27 A continuous drain current at 25°C case temperature. It comes in a TO-252-3 (DPak) surface-mount package, a standard footprint for medium-power switching and load-switching applications. The 50 mOhm maximum on-resistance at 10 V gate drive keeps conduction losses manageable for a 75 V device, and the 33 nC gate charge at 10 V means a standard gate driver can switch it without excessive drive current. The junction temperature range spans -55°C to 175°C, so it handles the thermal cycling seen in motor drives, DC-DC converters, and automotive loads.
Package and mounting — DPak fits standard reflow
The TO-252-3 (DPak) package (supplier device package PG-TO252-3-11) is a surface-mount DPAK with two leads and a tab. The tab is the drain connection and carries heat to the PCB copper.
Lifecycle and compliance — active production, no obsolescence risk
It is ROHS3 compliant. The junction temperature range is -55°C to 175°C.
Sourcing and availability
This part is sourced through independent distribution and quoted to order against an RFQ. The product status is active.