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Infineon Technologies IPD200N15N3GATMA1
Infineon Technologies

Infineon IPD200N15N3GATMA1 N-Channel MOSFET, 150 V, 50 A

MPNIPD200N15N3GATMA1
End of Life

Infineon OptiMOS™ IPD200N15N3GATMA1, N-Channel MOSFET, 150 V Vdss, 50 A Id, 20 mOhm Rds(on) at 10 V, TO-252-3 (DPak), -55°C to 175°C.

$2.95Ref. price · indicative, final on quote
IPD200N15N3GATMA1 datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPD200N15N3GATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)8V, 10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation150W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 90µA
Rds on (Max) @ id, vgs20mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs31 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1820 pF @ 75 V

Product details

The IPD200N15N3GATMA1: With 150 V drain-source rating, this MOSFET provides comfortable headroom for 48 V bus systems (telecom, industrial) and 12 V automotive loads where transients can exceed 40 V. The 20 mOhm Rds(on) at 10 V drive means the part is optimised for 10 V gate logic; the 8 V minimum drive voltage allows operation from an 8 V rail with slightly higher on-resistance. At 50 A, the conduction loss is 50 W at 20 mOhm, which the 150 W package rating can handle with proper heatsinking — but in practice, most designs will run well below that continuous current or use pulse operation.

TO-252-3 DPak — footprint and thermal reality

The PG-TO252-3 (DPak) surface-mount package has a large exposed drain tab for solder-down to the PCB copper plane. The 150 W power dissipation rating assumes the tab is soldered to a substantial copper area on a multi-layer board.

Frequently asked questions

What is a suitable replacement for IPD200N15N3GATMA1?

No direct pin-compatible replacement is recorded in the Infineon cross-reference database. The CoolMOS™ CE peer IPD50R950CEAUMA1 is a 500 V device with 950 mOhm on-resistance and 4.3 A continuous drain — it is not a functional substitute for this 150 V, 50 A OptiMOS™ part.

Can I use IPD200N15N3GATMA1 in a 12V automotive circuit?

Yes. The 150 V drain-source rating provides ample margin above 12 V battery-line transients (load dump, jump-start), and the -55°C to 175°C junction temperature covers under-hood environments. The 20 mOhm Rds(on) at 10 V gate drive is compatible with 12 V gate signals.