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Infineon Technologies IPD14N06S280ATMA2

Infineon IPD14N06S280ATMA2 N-Channel MOSFET, 55V 17A TO-252

MPNIPD14N06S280ATMA2
End of Life

Infineon OptiMOS N-Channel MOSFET, 55 V drain-source, 17 A continuous drain, 80 mOhm Rds(on) at 10 V gate drive, PG-TO252-3-11 package, -55 to 175 °C junction temperature.

$1.04Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPD14N06S280ATMA2 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation47W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 14µA
Rds on (Max) @ id, vgs80mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs10 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds293 pF @ 25 V

Product details

What this 55 V N-channel OptiMOS brings to the board

It comes in the PG-TO252-3-11 (DPak / TO-252) surface-mount package, a common footprint for medium-power switching and linear applications. With a gate charge of 10 nC at 10 V, the switching losses stay manageable for moderate-frequency converters and load switches.

Input capacitance of 293 pF at 25 V drain-source is on the lower side for a 55 V / 17 A FET, which helps keep switching edges clean and reduces cross-conduction in half-bridge topologies.

Package and mounting — TO-252 footprint realities

The PG-TO252-3-11 (DPak) is a three-lead surface-mount package with a large tab for thermal dissipation. The tab is electrically connected to the drain, so the PCB copper plane must handle drain potential — no shared ground plane without isolation.

ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of IPD14N06S280ATMA2?

The maximum on-resistance is 80 mOhm at 7 A drain current with 10 V gate-to-source drive. The part requires a 10 V gate signal to achieve that rating.