What this 55 V N-channel OptiMOS brings to the board
The Infineon IPD14N06S280ATMA2 is an N-channel enhancement-mode MOSFET from the OptiMOS family, rated for 55 V drain-to-source and 17 A continuous drain current at 25 °C case temperature. It comes in the PG-TO252-3-11 (DPak / TO-252) surface-mount package, a common footprint for medium-power switching and linear applications. The 80 mOhm maximum on-resistance at 10 V gate drive and 7 A drain current sets the conduction loss baseline for a 55 V class part. With a gate charge of 10 nC at 10 V, the switching losses stay manageable for moderate-frequency converters and load switches. The junction temperature range spans -55 to 175 °C.
Rds(on) and gate drive — what the numbers mean for your BOM
The 80 mOhm Rds(on) is specified at 10 V gate drive, so the design must supply a gate voltage at least 10 V above source to achieve that on-resistance. The 10 nC gate charge at 10 V means the gate driver only needs to source a modest charge per switching cycle. Input capacitance of 293 pF at 25 V drain-source is on the lower side for a 55 V / 17 A FET, which helps keep switching edges clean and reduces cross-conduction in half-bridge topologies.
Package and mounting — TO-252 footprint realities
The PG-TO252-3-11 (DPak) is a three-lead surface-mount package with a large tab for thermal dissipation. The tab is electrically connected to the drain, so the PCB copper plane must handle drain potential — no shared ground plane without isolation. Power dissipation is rated at 47 W at case temperature, but that figure assumes the tab is soldered to adequate copper area and the case is held at 25 °C.
Lifecycle and sourcing
ROHS3 compliant. No official successor or second-source alternate is listed for this exact order code.