Infineon Technologies · OptiMOS™ Series
Infineon OptiMOS N-Channel MOSFET, 100 V drain-source, 59 A continuous drain current, 12.2 mOhm Rds(on) at 10 V gate drive, TO-252-3 (DPak) surface-mount package, -55°C to 175°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 59A (Tc) |
| Power dissipation | 94W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3.5V @ 46µA |
| Rds on (Max) @ id, vgs | 12.2mOhm @ 46A, 10V |
| Gate charge (Qg) (Max) @ vgs | 35 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2500 pF @ 50 V |
Input capacitance is 2500 pF at 50 V drain-source. The gate threshold voltage maximum is 3.5 V at 46 µA drain current, and the recommended drive voltage range for minimum and maximum Rds(on) is 6 V to 10 V. For a 100 kHz hard-switched application, the 35 nC Qg keeps gate-drive losses manageable with a standard driver IC.
The OptiMOS series is Infineon's mainstream power MOSFET platform, with broad distribution support.
