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Infineon Technologies IPD122N10N3GATMA1

Infineon IPD122N10N3GATMA1 N-Channel MOSFET, 100V 59A

MPNIPD122N10N3GATMA1
End of Life

Infineon OptiMOS N-Channel MOSFET, 100 V drain-source, 59 A continuous drain current, 12.2 mOhm Rds(on) at 10 V gate drive, TO-252-3 (DPak) surface-mount package, -55°C to 175°C junction temperature.

$1.86Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPD122N10N3GATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C59A (Tc)
Power dissipation94W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 46µA
Rds on (Max) @ id, vgs12.2mOhm @ 46A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2500 pF @ 50 V

Product details

Input capacitance is 2500 pF at 50 V drain-source. The gate threshold voltage maximum is 3.5 V at 46 µA drain current, and the recommended drive voltage range for minimum and maximum Rds(on) is 6 V to 10 V. For a 100 kHz hard-switched application, the 35 nC Qg keeps gate-drive losses manageable with a standard driver IC.

The OptiMOS series is Infineon's mainstream power MOSFET platform, with broad distribution support.

Frequently asked questions

What is the Rds(on) of IPD122N10N3GATMA1?

Maximum on-resistance is 12.2 mOhm at 46 A drain current with 10 V gate drive. This is the figure to use for conduction loss calculations at full load.

Is IPD122N10N3GATMA1 RoHS compliant?

Yes, it is ROHS3 compliant, meeting current EU RoHS exemption rules.

Does IPD122N10N3GATMA1 require a heatsink?

At 94 W maximum power dissipation, a heatsink or substantial PCB copper area on the drain tab is required for continuous high-current operation. The exact need depends on load current, switching frequency, and ambient temperature — the junction temperature must stay within the -55°C to 175°C range.

What is the equivalent of IPD122N10N3GATMA1?

The IPD50R950CEAUMA1 is a different voltage class (500 V) and current rating (4.3 A), not a functional equivalent. For a 100 V, 59 A N-channel MOSFET in TO-252, the IPD122N10N3GATMA1 is the active OptiMOS option; Infineon does not list a direct pin-compatible second source in this series.