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Infineon Technologies IPD122N10N3GATMA1
Infineon Technologies

Infineon IPD122N10N3GATMA1 N-Channel MOSFET, 100V 59A

MPNIPD122N10N3GATMA1
End of Life

Infineon OptiMOS N-Channel MOSFET, 100 V drain-source, 59 A continuous drain current, 12.2 mOhm Rds(on) at 10 V gate drive, TO-252-3 (DPak) surface-mount package, -55°C to 175°C junction temperature.

$1.86Ref. price · indicative, final on quote
IPD122N10N3GATMA1 datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPD122N10N3GATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C59A (Tc)
Power dissipation94W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 46µA
Rds on (Max) @ id, vgs12.2mOhm @ 46A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2500 pF @ 50 V

Product details

Gate drive and switching characteristics

The IPD122N10N3GATMA1: The device is specified with a 35 nC total gate charge at 10 V gate drive, which sets the gate-drive current requirement for a given switching frequency. Input capacitance is 2500 pF at 50 V drain-source. The gate threshold voltage maximum is 3.5 V at 46 µA drain current, and the recommended drive voltage range for minimum and maximum Rds(on) is 6 V to 10 V. For a 100 kHz hard-switched application, the 35 nC Qg keeps gate-drive losses manageable with a standard driver IC.

Lifecycle and compliance

The IPD122N10N3GATMA1 carries an Active product status and is ROHS3 compliant. No end-of-life notice or last-time-buy schedule is in effect, so the part is suitable for new designs and ongoing production. The OptiMOS series is Infineon's mainstream power MOSFET platform, with broad distribution support.

Frequently asked questions

What is the Rds(on) of IPD122N10N3GATMA1?

Maximum on-resistance is 12.2 mOhm at 46 A drain current with 10 V gate drive. This is the figure to use for conduction loss calculations at full load.

Is IPD122N10N3GATMA1 RoHS compliant?

Yes, it is ROHS3 compliant, meeting current EU RoHS exemption rules.

Does IPD122N10N3GATMA1 require a heatsink?

At 94 W maximum power dissipation, a heatsink or substantial PCB copper area on the drain tab is required for continuous high-current operation. The exact need depends on load current, switching frequency, and ambient temperature — the junction temperature must stay within the -55°C to 175°C range.

What is the equivalent of IPD122N10N3GATMA1?

The IPD50R950CEAUMA1 is a different voltage class (500 V) and current rating (4.3 A), not a functional equivalent. For a 100 V, 59 A N-channel MOSFET in TO-252, the IPD122N10N3GATMA1 is the active OptiMOS option; Infineon does not list a direct pin-compatible second source in this series.