100 V P-channel for high-side switching with thermal headroom
The Infineon IPD11DP10NMATMA1 is a P-Channel MOSFET from the OptiMOS™ trench family, rated for 100 V drain-source voltage and 22 A continuous drain current when the case is held at 25 °C.
The gate charge is 74 nC at 10 V, which is moderate for a 100 V P-channel in this package. With a 10 V drive voltage recommended for the rated Rds(on), the gate driver needs to source and sink enough current to hit the target switching times. Input capacitance is 3200 pF at 50 V drain-source — plan the gate-drive loop to keep inductance low; a 10 Ω to 22 Ω series gate resistor is typical to damp ringing without stretching the switching edge too far. The maximum gate-source voltage is ±20 V, so a 12 V gate drive rail is safe, but a 15 V rail needs a zener clamp. The threshold voltage maximum is 4 V at 1.7 mA, meaning the device is fully enhanced only above 4 V — a 3.3 V logic-level gate drive will not turn it on hard enough to get the rated Rds(on).
Thermal budget — the case versus ambient current ratings
The continuous drain current is specified two ways: 3.4 A when the ambient is 25 °C (no heatsink), and 22 A when the case is held at 25 °C. The 125 W power dissipation at the case is the package limit with an infinite heatsink; the 3 W at ambient is what the bare board can handle. In a real design with a 50 °C ambient and a 1-inch-square copper pad on a 2-layer board, expect the usable current to land somewhere between those two numbers — run the junction temperature calculation with the 111 mOhm Rds(on) and your actual duty cycle.