Skip to main content
Infineon Technologies IPD110N12N3GATMA1
Infineon Technologies

Infineon IPD110N12N3GATMA1 N-Channel MOSFET, 120V 75A

MPNIPD110N12N3GATMA1
End of Life

Infineon OptiMOS N-Channel MOSFET, 120V Vdss, 75A continuous drain, 11mOhm Rds(on) at 10V, 65nC gate charge, PG-TO252-3 surface mount, -55°C to 175°C junction temperature.

$2.4Ref. price · indicative, final on quote
IPD110N12N3GATMA1 datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD110N12N3GATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage120 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation136W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 83µA (Typ)
Rds on (Max) @ id, vgs11mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs65 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4310 pF @ 60 V

Product details

Package and mounting — PG-TO252-3

The IPD110N12N3GATMA1: Housed in the PG-TO252-3 (DPak) surface-mount package, this part has two leads plus a tab that carries the drain current. The tab is the primary thermal path — board layout should connect it to a copper plane for heat spreading. The supplier device package code PG-TO252-3 is Infineon's variant; it is footprint-compatible with standard TO-252 land patterns. Mounting type is surface mount, so reflow or vapor-phase soldering is the assembly method.

Lifecycle and compliance

No last-time-buy or end-of-life notice is in effect. ROHS3 compliant, and the Vgs maximum of ±20 V gives margin for gate-drive overshoot in noisy environments.

Frequently asked questions

What is the Rds(on) of IPD110N12N3GATMA1?

The maximum on-resistance is 11 mOhm at a drain current of 75 A with a 10 V gate drive.

Is IPD110N12N3GATMA1 lead-free?

The part is ROHS3 compliant, meaning it meets the lead-free and restricted-substance requirements of the ROHS directive.

What is the equivalent or replacement for IPD110N12N3GATMA1?

No direct pin-compatible replacement is listed in the official records. The IPD50R950CEAUMA1 is a different class — 500 V, 950 mOhm, 4.3 A — and is not a functional substitute for this 120 V, 11 mOhm, 75 A part.

What are the exact specifications of IPD110N12N3GATMA1?

Key specs: N-channel, 120 V Vdss, 75 A continuous drain at 25 °C, 11 mOhm Rds(on) at 10 V, 65 nC gate charge at 10 V, 4310 pF input capacitance at 60 V, 136 W power dissipation, junction temperature range -55 °C to 175 °C, PG-TO252-3 package.