The IPD100N04S4L02ATMA1 N-channel MOSFET has a 1.9 mOhm maximum on-resistance at Vgs=10 V and 100 A.
Gate drive and switching — 156 nC total gate charge
Total gate charge is 156 nC at Vgs=10 V. For a 100 kHz switching frequency the average gate-drive current needed is about 15.6 mA — well within a standard gate driver's capability, but the 12800 pF input capacitance at Vds=25 V means the driver output impedance must be low enough to avoid excessive rise/fall times. The drive voltage range is specified for both 4.5 V and 10 V logic levels; the 1.9 mOhm Rds(on) is guaranteed at 10 V, but at 4.5 V the on-resistance will be higher — check the typical curve in the datasheet if your gate drive is 5 V logic.
Automotive qualification and temperature range
The junction temperature range is -55 °C to 175 °C, so it can sit in an engine bay or near a hot exhaust component without derating the current as aggressively as a 150 °C part. The PG-TO252-3-313 (DPak) footprint is the same as a standard TO-252, so the PCB layout matches any existing DPak land pattern.