9 mOhm at 30 A — the conduction-loss floor
The IPD090N03LGATMA1: The 9 mOhm maximum on-resistance at Vgs=10 V and Id=30 A sets the conduction loss for a 30 A load, within the 42 W package dissipation limit with adequate copper on the DPak tab.
Total gate charge is 15 nC at Vgs=10 V. The 1600 pF input capacitance at Vds=15 V confirms the gate is not a heavy load for the drive stage.
175 °C junction — where it survives
That 175 °C ceiling puts this part in the automotive-grade bucket — suitable for under-hood environments, engine bay electronics, and high-ambient industrial enclosures where the junction sees sustained thermal stress. The 2.2 V maximum gate threshold at 250 µA means the device is fully enhanced with a 5 V logic-level gate drive, though the 9 mOhm Rds(on) is specified at 10 V.
TO-252-3 (DPak) with the PG-TO252-3-11 supplier code. Surface-mount, the tab is the drain. The tab pad needs a good solder fillet on the bottom-side copper for thermal performance.
ROHS3 compliant per.