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Infineon Technologies IPD082N10N3GATMA1
Infineon Technologies

IPD082N10N3GATMA1 Infineon OptiMOS N-Ch MOSFET, 100V 80A

MPNIPD082N10N3GATMA1
End of Life

Infineon OptiMOS series IPD082N10N3GATMA1, N-Channel MOSFET, 100V Vdss, 80A Id, 8.2mOhm Rds(on) at 10V, 55nC Qg, TO-252-3 (DPak) surface mount, -55°C to 175°C.

$2.02Ref. price · indicative, final on quote
IPD082N10N3GATMA1 datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD082N10N3GATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.5V @ 75µA
Rds on (Max) @ id, vgs8.2mOhm @ 73A, 10V
Gate charge (Qg) (Max) @ vgs55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3980 pF @ 50 V

Product details

Switching performance and gate drive budget

The IPD082N10N3GATMA1: Total gate charge is 55 nC at 10 V. Input capacitance is 3980 pF at 50 V Vds.

Thermal envelope and mounting

The 125 W power dissipation at case temperature is a maximum — actual dissipation depends on the PCB copper area and airflow around the TO-252-3 (DPak) package. The exposed tab on the PG-TO252-3 footprint connects to the drain; the PCB copper pour under the tab is the primary heat path.

Lifecycle and compliance

ROHS3 compliant per.

Frequently asked questions

What is the Rds(on) of IPD082N10N3GATMA1?

Maximum on-resistance is 8.2 mOhm at 73 A drain current with 10 V gate drive. The drive voltage range for achieving rated Rds(on) is 6 V to 10 V.

Is IPD082N10N3GATMA1 RoHS compliant?

Yes, it is ROHS3 compliant.