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Infineon Technologies IPD079N06L3GATMA1

IPD079N06L3GATMA1 OptiMOS N-Ch 60V 50A MOSFET

MPNIPD079N06L3GATMA1
End of Life

Infineon OptiMOS™ IPD079N06L3GATMA1, N-Channel MOSFET, 60V Vdss, 50A Id, 7.9mOhm Rds(on) at 10V, 29nC Qg, TO-252-3 (DPak), -55°C to 175°C.

$1.06Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPD079N06L3GATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation79W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.2V @ 34µA
Rds on (Max) @ id, vgs7.9mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds4900 pF @ 30 V

Product details

Total gate charge is 29 nC at 4.5 V, which keeps the drive current modest at moderate switching frequencies — a 100 kHz hard-switched converter needs under 3 mA average from the driver. The drive voltage range (4.5 V to 10 V) means a 5 V logic-level gate drive can turn it on fully, though the 10 V spec delivers the stated Rds(on) minimum.

Thermal headroom and package

Frequently asked questions

Is IPD079N06L3GATMA1 RoHS compliant?

Yes, it is listed as ROHS3 Compliant.