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Infineon Technologies IPD075N03LGATMA1

IPD075N03LGATMA1 OptiMOS N-Ch 30V 50A MOSFET

MPNIPD075N03LGATMA1
End of Life

Infineon OptiMOS™ IPD075N03LGATMA1, N-Channel MOSFET, 30V Vdss, 50A continuous drain at 25°C case, 7.5mOhm Rds(on) max at 30A/10V, 18nC gate charge at 10V, PG-TO252-3-11 package, -55°C to 175°C junction temperature.

$0.68Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPD075N03LGATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation47W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs7.5mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs18 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1900 pF @ 15 V

Product details

30V, 7.5mOhm N-channel — the conduction-loss floor

The Infineon IPD075N03LGATMA1 is an OptiMOS™ N-channel MOSFET rated for 30V drain-source and 50A continuous drain at a 25°C case temperature. The 7.5mOhm maximum on-resistance at 30A and 10V gate drive sets the conduction-loss floor for a 12V or 24V bus — at 30A the dissipation is under 7W, leaving headroom in the 47W package limit.

Total gate charge is 18 nC at 10V gate drive. The 1900 pF input capacitance at 15V drain-source confirms the switching losses stay manageable in hard-switched topologies.

Thermal range and package reality

ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of IPD075N03LGATMA1 at 10V?

The maximum Rds(on) is 7.5mOhm at 30A drain current with 10V gate drive.

What is the gate charge of IPD075N03LGATMA1?

Total gate charge is 18 nC at 10V gate-source voltage.