Infineon OptiMOS IPD068N10N3GATMA1, N-Channel MOSFET, 100 V Vdss, 90 A Id, 6.8 mOhm Rds(on) @ 10 V, 68 nC Qg, TO-252-3 (DPak), -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 90A (Tc) |
| Power dissipation | 150W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3.5V @ 90µA |
| Rds on (Max) @ id, vgs | 6.8mOhm @ 90A, 10V |
| Gate charge (Qg) (Max) @ vgs | 68 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4910 pF @ 50 V |
The IPD068N10N3GATMA1: Total gate charge is 68 nC at 10 V.
The 150 W power dissipation rating at case temperature is a package-limited ceiling. Gate threshold voltage is specified at 3.5 V maximum at 90 µA drain current, and the drive voltage range for achieving minimum Rds(on) is 6 V to 10 V.
The cut-tape option is also listed for prototype or low-volume builds.
This is the conduction loss figure used for thermal and efficiency calculations.
The total gate charge is 68 nC at a 10 V gate drive. This value determines the gate-driver current needed for a given switching frequency.
The IPD068N10N3GATMA1 is the tape-and-reel ordering variant of the base IPD068N10N3 die. The electrical ratings are identical — the suffix only changes the packaging format. Confirm the package code matches your BOM's assembly requirement.