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Infineon Technologies IPD055N08NF2SATMA1
Infineon Technologies

Infineon IPD055N08NF2SATMA1 N-Channel MOSFET, 80 V, 5.5 mOhm

MPNIPD055N08NF2SATMA1
End of Life

Infineon StrongIRFET™ 2, N-Channel MOSFET, 80 V, 98 A (Tc), 5.5 mOhm at 60 A, 10 V, TO-252-3 (DPak), -55 to 175 °C.

$1.7Ref. price · indicative, final on quote
IPD055N08NF2SATMA1 datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPD055N08NF2SATMA1 Technical Specifications
ParameterValue
SeriesStrongIRFET™ 2
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C17A (Ta), 98A (Tc)
Power dissipation3W (Ta), 107W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube; Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3.8V @ 55µA
Rds on (Max) @ id, vgs5.5mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs54 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2500 pF @ 40 V

Product details

80 V, 5.5 mOhm — the numbers that decide the fit

The IPD055N08NF2SATMA1 is an 80 V N-Channel StrongIRFET™ 2 MOSFET with a max Rds(on) of 5.5 mOhm at 60 A, 10 V. The 5.5 mOhm is the max at 60 A and 10 V. The 107 W package limit at the case (Tc) gives room, but the 3 W at ambient (Ta) requires a heatsink or copper pour.

Gate charge and drive — what 54 nC means for the driver

Gate charge (Qg) is 54 nC at 10 V. Input capacitance (Ciss) is 2500 pF at 40 V Vds.

175 °C junction — not just a number

The operating junction temperature range is -55 to 175 °C.

Package and field reality

Housed in a TO-252-3 (DPak) surface-mount package, the PG-TO252-3 variant. The DPak is a common, rework-friendly footprint — a hot-air station and some solder wick can swap it in the field, though the large tab needs a good thermal pad to the board. The tab is the drain, so the PCB copper pour is part of the thermal path. No lab bench needed for a swap, but the board has to be designed for it: a 2 oz copper pour under the tab is the minimum for 60 A continuous.

Lifecycle and sourcing

ROHS3 compliant.

Frequently asked questions

Is IPD055N08NF2SATMA1 obsolete or still active?

It is active — listed as current production with no NRND or EOL status. Infineon continues to manufacture the StrongIRFET™ 2 series.

What is the Rds(on) of IPD055N08NF2SATMA1?

This is the guaranteed ceiling at 25 °C junction.

Is IPD055N08NF2SATMA1 RoHS compliant?

Yes, it is ROHS3 compliant per Infineon's listing.