80 V, 5.3 mΩ — conduction-loss ceiling for a 90 A switch
The IPD053N08N3GATMA1 is an Infineon OptiMOS N-channel MOSFET rated for 80 V drain-source breakdown and 90 A continuous drain current at a case temperature of 25 °C. The on-resistance is specified at 5.3 mΩ maximum when driven with 10 V on the gate—this is the number that sets the conduction loss in a synchronous buck or a motor-drive half-bridge. The device is housed in a PG-TO252-3 (DPak) surface-mount package, which is a common footprint for 60–100 A class automotive and industrial power stages. The junction temperature range extends from -55 °C to 175 °C, covering under-hood and high-ambient environments.
Gate charge and switching — 69 nC at 10 V
Total gate charge is 69 nC at Vgs = 10 V. For a 100 kHz switching frequency the gate-drive current requirement is roughly 6.9 mA average, well within the capability of a standard MOSFET driver. The input capacitance (Ciss) is 4750 pF at Vds = 40 V, which influences the driver's peak current for fast rise times. The gate threshold voltage is specified at 3.5 V maximum at Id = 90 µA. Nominal drive voltage for minimum Rds(on) is 10 V, but the device is characterised at 6 V as well, making it suitable for 5 V logic-driven gate drivers with a bootstrap rail.