Infineon OptiMOS™ series, N-Channel MOSFET, 100 V Vdss, 80 A continuous drain (Tc), 5 mOhm Rds(on) at 40 A, 10 V, PG-TO252-3 (DPak) surface-mount package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 150W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3.8V @ 84µA |
| Rds on (Max) @ id, vgs | 5mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 64 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4700 pF @ 50 V |
The IPD050N10N5ATMA1: Input capacitance of 4700 pF at 50 V Vds and 64 nC gate charge at 10 V set the switching loss profile.
The PG-TO252-3 (DPak) is a surface-mount package with a large exposed tab for thermal transfer. The tab is the drain connection, so the PCB layout must handle that node as a high-current, high-voltage plane.
The ROHS3 status covers the full substance restriction, including the four phthalates.
Yes, it is ROHS3 compliant, covering the full RoHS substance restrictions including the four phthalates.
This part is sourced and quoted to order through independent distribution. Submit an RFQ for current pricing and availability — lead time and stock are confirmed at quote time.
There is no official replacement or successor listed. The IPD50R950CEAUMA1 is a different device — a 500 V CoolMOS with 950 mOhm Rds(on) and 4.3 A current rating — not a functional substitute for this 100 V, 80 A OptiMOS.