Infineon Technologies · OptiMOS™ Series
Infineon OptiMOS IPD050N03LGATMA1, N-Channel MOSFET, 30 V Vdss, 50 A Id, 5 mOhm Rds(on) at 10 V, TO-252-3 (DPak), -55°C to 175°C Tj.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 50A (Tc) |
| Power dissipation | 68W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 5mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 31 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3200 pF @ 15 V |
The IPD050N03LGATMA1: With 5 mOhm Rds(on) at 30 A and 10 V, the conduction loss at 30 A is under 4.5 W — manageable with the 68 W power dissipation rating and the TO-252-3 package's exposed tab.
The TO-252-3 (DPak) surface-mount package with exposed tab allows heatsinking through the PCB copper pour.