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Infineon Technologies IPD040N03LGATMA1

Infineon Technologies IPD040N03LGATMA1

MPNIPD040N03LGATMA1
End of Life

MOSFET N-CH 30V 90A TO252-3

$1.4Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPD040N03LGATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C90A (Tc)
Power dissipation79W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs4mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs38 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3900 pF @ 15 V