40 V, 90 A N-channel MOSFET in TO-252-3
The IPD036N04LGATMA1: N-channel MOSFET in a PG-TO252-3-11 (DPak) surface-mount package. The part also supports a 4.5 V gate drive for lower-voltage logic-level control, though Rds(on) will be higher at that drive voltage.
Thermal and switching headroom
Maximum power dissipation is 94 W at case temperature, derated above that point per the datasheet curve. The DPak pad on the PCB — typically a copper island under the tab — determines the real thermal resistance.
It is ROHS3 compliant, with no restricted substances above the threshold.
