40 V, 90 A N-channel MOSFET in TO-252-3
The IPD036N04LGATMA1: N-channel MOSFET in a PG-TO252-3-11 (DPak) surface-mount package. The part also supports a 4.5 V gate drive for lower-voltage logic-level control, though Rds(on) will be higher at that drive voltage.
Thermal and switching headroom
Gate charge is 78 nC at 10 V, input capacitance 6300 pF at 20 V. Maximum power dissipation is 94 W at case temperature, derated above that point per the datasheet curve. The DPak pad on the PCB — typically a copper island under the tab — determines the real thermal resistance.
Lifecycle and compliance
It is ROHS3 compliant, with no restricted substances above the threshold.
