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Infineon Technologies IPD034N06N3GATMA1
Infineon Technologies

Infineon IPD034N06N3GATMA1 N-Channel MOSFET, 60 V, 100 A

MPNIPD034N06N3GATMA1
End of Life

Infineon OptiMOS N-Channel MOSFET, 60 V, 100 A, 3.4 mOhm Rds(on) at 10 V, 130 nC gate charge, TO-252-3 (DPak) package, -55°C to 175°C.

$1.76Ref. price · indicative, final on quote
IPD034N06N3GATMA1 datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPD034N06N3GATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation167W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 93µA
Rds on (Max) @ id, vgs3.4mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs130 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds11000 pF @ 30 V

Product details

The IPD034N06N3GATMA1: ROHS3 compliant per the listing.

At 100 A continuous drain current and 10 V gate drive, the maximum on-resistance is 3.4 mOhm. The 167 W package dissipation limit gives thermal margin when the copper pad area is adequate. Gate charge totals 130 nC at 10 V. For a 100 kHz switching frequency, the average gate-drive current works out to 13 mA — within the capability of most dedicated MOSFET drivers, but a microcontroller GPIO will need a driver stage.

60 V drain rating — bus voltage headroom

The 60 V Vdss leaves about 20 % derating on a 48 V bus, which is the standard margin for transients in industrial and automotive 48 V systems. On a 24 V rail the margin is generous, so the part can handle load-dump spikes without avalanche stress.

175 °C junction — under-hood and motor-drive ready

The 175 °C ceiling means the part does not need aggressive heatsinking for moderate loads.

TO-252-3 footprint — layout note

The PG-TO252-3 package (DPak) has a single exposed tab that carries the drain.

Frequently asked questions

What is the Rds(on) and gate charge of IPD034N06N3GATMA1?

Maximum Rds(on) is 3.4 mOhm at 100 A drain current and 10 V gate drive. Total gate charge is 130 nC at 10 V.

Is IPD034N06N3GATMA1 RoHS compliant and lead-free?

Yes, it is listed as ROHS3 compliant.

Can IPD034N06N3GATMA1 replace a failed IRFZ44N in a motor driver?

The IPD034N06N3GATMA1 has a 60 V drain rating and 3.4 mOhm Rds(on), which is a lower on-resistance than the IRFZ44N's typical 17.5 mOhm. The gate charge is higher (130 nC vs roughly 60 nC for the IRFZ44N), so the gate driver must supply more current to maintain switching speed. The TO-252-3 footprint is different from the IRFZ44N's TO-220, so a board layout change is required.