IPD034N06N3GATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS N-Channel MOSFET, 60 V, 100 A, 3.4 mOhm Rds(on) at 10 V, 130 nC gate charge, TO-252-3 (DPak) package, -55°C to 175°C.

Infineon Technologies IPD034N06N3GATMA1
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[IN STOCK] In Stock: 4 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPD034N06N3GATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation167W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 93µA
Rds on (Max) @ id, vgs3.4mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs130 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds11000 pF @ 30 V

Technical details

The IPD034N06N3GATMA1: ROHS3 compliant per the listing.

The 167 W package dissipation limit gives thermal margin when the copper pad area is adequate. Gate charge totals 130 nC at 10 V.

60 V drain rating — bus voltage headroom

The 60 V Vdss leaves about 20 % derating on a 48 V bus, which is the standard margin for transients in industrial and automotive 48 V systems. On a 24 V rail the margin is generous, so the part can handle load-dump spikes without avalanche stress.

175 °C junction — under-hood and motor-drive ready

The 175 °C ceiling means the part does not need aggressive heatsinking for moderate loads.

TO-252-3 footprint — layout note

The PG-TO252-3 package (DPak) has a single exposed tab that carries the drain.

IPD034N06N3GATMA1
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