The Infineon IPD031N06L3GATMA1 is a 60 V, 100 A N-channel OptiMOS MOSFET in a PG-TO252-3 (DPak) surface-mount package. Gate charge is 79 nC at 4.5 V. Input capacitance is 13000 pF at 30 V drain-source.
175 °C junction — thermal headroom for tight layouts
Power dissipation is rated at 167 W at case temperature — a number that assumes an infinite heatsink. In practice the board copper and airflow set the real limit; the 175 °C junction gives a few more degrees of headroom before the Rds(on) climbs with temperature.
ROHS3 compliant.
The 3.1 mOhm Rds(on) at 10 V and 79 nC gate charge are the two numbers that decide whether this part fits a given power stage; the 175 °C junction rating adds thermal margin for dense layouts.