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Infineon Technologies IPD031N06L3GATMA1
Infineon Technologies

IPD031N06L3GATMA1 OptiMOS N-Ch 60V 100A TO252-3 MOSFET

MPNIPD031N06L3GATMA1
End of Life

Infineon OptiMOS™ IPD031N06L3GATMA1, N-Channel MOSFET, 60 V drain-source, 100 A continuous drain, 3.1 mOhm Rds(on) at 10 V, 79 nC gate charge, PG-TO252-3 package, -55 to 175 °C junction temperature.

$2.8Ref. price · indicative, final on quote
IPD031N06L3GATMA1 datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD031N06L3GATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation167W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.2V @ 93µA
Rds on (Max) @ id, vgs3.1mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs79 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds13000 pF @ 30 V

Product details

3.1 mOhm Rds(on) at 10 V — what it buys the power stage

The Infineon IPD031N06L3GATMA1 is a 60 V, 100 A N-channel OptiMOS MOSFET in a PG-TO252-3 (DPak) surface-mount package. Gate charge is 79 nC at 4.5 V. Input capacitance is 13000 pF at 30 V drain-source.

175 °C junction — thermal headroom for tight layouts

Rated junction temperature spans -55 °C to 175 °C. Power dissipation is rated at 167 W at case temperature — a number that assumes an infinite heatsink. In practice the board copper and airflow set the real limit; the 175 °C junction gives a few more degrees of headroom before the Rds(on) climbs with temperature.

ROHS3 compliant.

Sourcing and fit for the BOM

The 3.1 mOhm Rds(on) at 10 V and 79 nC gate charge are the two numbers that decide whether this part fits a given power stage; the 175 °C junction rating adds thermal margin for dense layouts.

Frequently asked questions

What are the Rds(on) and gate charge of IPD031N06L3GATMA1?

Maximum Rds(on) is 3.1 mOhm at 100 A drain current with 10 V gate drive. Maximum gate charge is 79 nC at 4.5 V gate-source voltage.

Is IPD031N06L3GATMA1 obsolete or End-of-Life?

No.