60 V N-channel OptiMOS for automotive power switching
The Infineon IPB90N06S4L04ATMA2 is an N-channel enhancement-mode MOSFET from the OptiMOS series, rated for 60 V drain-source voltage and 90 A continuous drain current at 25°C case temperature. The 3.7 mOhm maximum on-resistance at 10 V gate drive keeps conduction losses low in high-current paths such as electric power steering, DC-DC converters, and motor-drive half-bridges. AEC-Q101 qualification and the -55°C to 175°C junction temperature range suit it for under-hood and chassis-mounted automotive electronics where thermal cycling and vibration are routine.
Gate drive and switching characteristics
The device is specified for drive voltages from 4.5 V to 10 V, with the lowest Rds(on) achieved at 10 V. Gate charge is 170 nC at 10 V, and input capacitance is 13000 pF at 25 V drain-source — numbers that feed into gate-driver sizing and switching-loss estimates for PWM frequencies typical in automotive loads. The ±16 V maximum gate-source rating gives margin against ringing on long gate traces.
Package and mounting
Housed in a TO-263-3 (D²Pak) surface-mount package (PG-TO263-3-2 supplier code), the large tab provides a low-thermal-resistance path to the PCB copper plane. The 150 W power dissipation at case temperature assumes adequate heatsinking — a solid copper pour under the tab is the standard approach. The tab is the drain terminal; board layout must account for that when routing the high-current loop.
Lifecycle and compliance
ROHS3 compliant. AEC-Q101 qualified and Automotive grade.