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Infineon Technologies IPB90N04S402ATMA1

Infineon IPB90N04S402ATMA1 N-Channel MOSFET, 40V 90A D²Pak

MPNIPB90N04S402ATMA1
End of Life

Infineon OptiMOS™ IPB90N04S402ATMA1, N-channel MOSFET, 40V Vdss, 90A continuous drain, 2.1 mOhm Rds(on) max at 10V, 118 nC gate charge, TO-263-3 (D²Pak) surface-mount package, -55°C to 175°C junction temperature.

$2.92Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPB90N04S402ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C90A (Tc)
Power dissipation150W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 95µA
Rds on (Max) @ id, vgs2.1mOhm @ 90A, 10V
Gate charge (Qg) (Max) @ vgs118 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9430 pF @ 25 V

Product details

40 V N-channel OptiMOS — what the 2.1 mOhm Rds(on) buys you

Rated for a drain-source voltage of 40 V and a continuous drain current of 90 A at 25°C case temperature, this part targets low-voltage, high-current switching applications like automotive DC-DC converters, motor drives, and battery management systems.

Gate charge and switching — what 118 nC means for the driver

With a maximum gate charge of 118 nC at 10 V, the IPB90N04S402ATMA1 requires a gate driver capable of sourcing and sinking that charge within the target switching period — a 118 nC gate at 100 kHz draws about 11.8 mA average from the driver, well within the capability of most dedicated MOSFET drivers. The input capacitance is 9430 pF at 25 V drain-source, which influences the turn-on and turn-off delay times; the driver output impedance and gate resistor should be selected to keep the switching edges clean and avoid Miller plateau ringing.

Package and mounting

Housed in a TO-263-3 (D²Pak) surface-mount package with the supplier device code PG-TO263-3, the large exposed drain tab provides a low thermal resistance path to the PCB copper plane — the power dissipation limit is 150 W at case temperature. Reworking a D²Pak on a hot-air station is straightforward if the board has adequate copper soak: preheat the board to 125°C, apply hot air to the tab until the solder reflows, then lift the part with tweezers — the tab's thermal mass means you need a nozzle that covers the full body, not a pencil tip.

Frequently asked questions

What is the Rds(on) of IPB90N04S402ATMA1?

The maximum Rds(on) is 2.1 mOhm at a drain current of 90 A and a gate-source voltage of 10 V.

What package does IPB90N04S402ATMA1 come in?

It is supplied in a TO-263-3 (D²Pak) surface-mount package, also designated PG-TO263-3 by Infineon.

What is the gate charge (Qg) of IPB90N04S402ATMA1?

The maximum gate charge is 118 nC at a 10 V gate drive.

Is IPB90N04S402ATMA1 RoHS compliant?

Yes, it is ROHS3 compliant.