Skip to main content
Log in
Infineon Technologies IPB80P04P4L04ATMA2

IPB80P04P4L04ATMA2 P-Channel MOSFET, 40V, 80A, 4.7mOhm

MPNIPB80P04P4L04ATMA2
End of Life

Infineon OptiMOS®-P2 IPB80P04P4L04ATMA2, P-Channel MOSFET, 40 V Vdss, 80 A continuous drain, 4.7 mOhm Rds(on) at 10 V, PG-TO263-3-2 package, -55 to 175 °C.

$3.3Ref. price · indicative, final on quote
Infineon Technologies IPB80P04P4L04ATMA2 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesOptiMOS®-P2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPB80P04P4L04ATMA2 specifications
ParameterValue
SeriesOptiMOS®-P2
FET typeP-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+5V, -16V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs4.7mOhm @ 80A, 10V
Gate charge (Qg) (Max) @ vgs176 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds11570 pF @ 25 V

Product details

40 V P-channel in a TO-263 — where the 4.7 mOhm matters

The Infineon IPB80P04P4L04ATMA2 is a P-channel MOSFET from the OptiMOS®-P2 series, rated for 40 V drain-source breakdown and 80 A continuous drain current at a case temperature of 25 °C. The TO-263 (D²Pak) package with a single exposed tab handles 125 W power dissipation when properly heatsunk.

Gate charge and switching — 176 nC at 10 V

The drive voltage range spans 4.5 V to 10 V; the 10 V drive achieves the minimum Rds(on), while 4.5 V is the minimum recommended drive for the rated on-resistance.

Frequently asked questions

Is IPB80P04P4L04ATMA2 lead-free and RoHS compliant?

Yes, the IPB80P04P4L04ATMA2 is ROHS3 compliant, meaning it meets the latest RoHS directive without exemptions for lead content.