Infineon OptiMOS™ IPB80N08S207ATMA1, N-Channel MOSFET, 75 V Vdss, 80 A Id, 7.1 mOhm Rds(on) at 80 A 10 V, 180 nC Qg, PG-TO263-3-2 package, -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 75 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 7.1mOhm @ 80A, 10V |
| Gate charge (Qg) (Max) @ vgs | 180 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4700 pF @ 25 V |
Input capacitance Ciss is 4700 pF at 25 V drain-source.
The part ships in a PG-TO263-3-2 package, the standard D²Pak (TO-263) with two leads plus the large exposed drain tab.
The 300 W power dissipation rating at Tc=25 °C derates linearly above that case temperature.
It is ROHS3 compliant.
Yes, the IPB80N08S207ATMA1 is listed as ROHS3 compliant.