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Infineon Technologies IPB80N06S407ATMA2

Infineon IPB80N06S407ATMA2 N-Channel MOSFET, 60V 80A

MPNIPB80N06S407ATMA2
End of Life

Infineon OptiMOS IPB80N06S407ATMA2, N-Channel MOSFET, 60 V drain-source, 80 A continuous drain, AEC-Q101 qualified, Automotive grade, TO-263-3 (D²Pak) surface-mount package.

$1.87Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPB80N06S407ATMA2 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation79W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 40µA
Gate charge (Qg) (Max) @ vgs56 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4500 pF @ 25 V

Product details

60 V / 80 A N-channel — the automotive power switch envelope

The IPB80N06S407ATMA2: The 60 V drain-source and 80 A continuous drain define its primary application envelope: high-current switching in automotive power trains. The device carries AEC-Q101 qualification and an Automotive grade designation, meaning it has passed the stress qualification tests required for production automotive programs. This is not a commercial or industrial-grade part — it is released for under-hood and chassis-domain applications where reliability screening is mandatory.

Gate drive and switching — what the 56 nC Qg means for the driver

The gate charge is 56 nC maximum at 10 V gate drive. For a given switching frequency, the average gate drive current is Qg × fsw. At 20 kHz, the driver must supply about 1.12 mA average; at 100 kHz, about 5.6 mA. The peak current capability of the gate driver must be sufficient to charge the 4500 pF input capacitance quickly to avoid excessive switching losses. The drive voltage for minimum Rds(on) is 10 V, and the maximum gate threshold voltage is 4 V at 40 µA drain current. This means a 3.3 V logic signal will not fully enhance the channel — a 5 V or 10 V gate drive is required to achieve the rated on-resistance. This is a common fit check when substituting into an existing BOM position.

Thermal design — 79 W dissipation at 175°C junction limit

The maximum power dissipation is 79 W at case temperature, and the operating junction temperature range extends from -55°C to 175°C. The 175°C maximum is the standard for under-hood automotive environments.

Package and assembly — TO-263-3 for automated reflow

The device is supplied in a TO-263-3 (D²Pak) surface-mount package, with the Infineon supplier package code PG-TO263-3-2. The large copper tab on the bottom provides a low thermal resistance path to the PCB. This package is compatible with reflow soldering and is the standard surface-mount power package for high-volume automotive production.

This is important for production programs that require multi-year supply assurance. The part is ROHS3 compliant, meeting the latest EU restriction of hazardous substances directive without exemptions.

Frequently asked questions

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