Skip to main content
Infineon Technologies IPB80N06S405ATMA2

Infineon IPB80N06S405ATMA2 N-Channel MOSFET, 60 V, 80 A

MPNIPB80N06S405ATMA2
End of Life

Infineon OptiMOS IPB80N06S405ATMA2, N-Channel MOSFET, 60 V Vdss, 80 A continuous drain, 5.7 mOhm Rds(on) at 10 V, 81 nC gate charge, AEC-Q101, -55°C to 175°C, PG-TO263-3-2.

$2.19Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPB80N06S405ATMA2 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation107W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 60µA
Rds on (Max) @ id, vgs5.7mOhm @ 80A, 10V
Gate charge (Qg) (Max) @ vgs81 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6500 pF @ 25 V

Product details

AEC-Q101 and 175°C junction — real under-hood margin

The IPB80N06S405ATMA2: AEC-Q101 qualification and a -55°C to 175°C operating junction temperature range confirm this part is released for automotive power-train, engine management, and 48 V board-net applications. The 175°C Tj max is the extended automotive limit — it allows continuous operation in high-ambient engine-bay environments without derating the 80 A current below the application load.

Gate drive budgeting at 81 nC

Total gate charge is 81 nC at a 10 V gate drive. For a typical switching frequency of 20 kHz, the average gate-drive current is 1.6 mA — well within the output capability of standard automotive gate-driver ICs. The 6500 pF input capacitance at 25 V drain bias means the driver must supply a peak current of roughly 1.6 A to achieve a 100 ns rise time; a gate resistor in the 5–10 Ohm range controls ringing without excessive switching loss.

Package and thermal interface

The PG-TO263-3-2 (D²Pak) surface-mount package with an exposed drain tab requires a thermal pad on the PCB — a copper area on the bottom layer keeps the junction-to-ambient thermal resistance low. The 2-lead-plus-tab configuration matches standard automotive ECU footprints; the tab is the drain terminal.

Frequently asked questions

What is the Rds(on) of IPB80N06S405ATMA2?

This is the conduction loss spec — at full rated current the I²R dissipation is 36.5 W.

Is IPB80N06S405ATMA2 AEC-Q101 qualified?

Yes, the part is AEC-Q101 qualified, which is the automotive discrete semiconductor qualification standard.

What is the maximum junction temperature of IPB80N06S405ATMA2?

The operating junction temperature range is -55°C to 175°C. The 175°C upper limit is the extended automotive-grade ceiling, allowing continuous operation in high-ambient engine-bay environments.

What is the gate charge of IPB80N06S405ATMA2?

This determines the gate-driver current required for a given switching frequency — at 20 kHz the average gate-drive current is 1.6 mA.