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Infineon Technologies IPB80N06S2L11ATMA2

Infineon IPB80N06S2L11ATMA2 N-Channel MOSFET, 55V 80A

MPNIPB80N06S2L11ATMA2
End of Life

Infineon OptiMOS™ IPB80N06S2L11ATMA2, N-Channel MOSFET, 55 V Vdss, 80 A continuous drain, 10.7 mOhm Rds(on) at 10 V, PG-TO263-3-2 package, -55 °C to 175 °C junction temperature.

$2.2Ref. price · indicative, final on quote
Infineon Technologies IPB80N06S2L11ATMA2 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPB80N06S2L11ATMA2 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation158W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2V @ 93µA
Rds on (Max) @ id, vgs10.7mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs80 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2075 pF @ 25 V

Product details

10.7 mOhm at 40 A — the conduction-loss anchor

The IPB80N06S2L11ATMA2: The 10.7 mOhm maximum on-resistance at Vgs=10 V and 40 A sets the conduction-loss floor for the design. This part targets high-current switching and OR-ing functions in automotive and industrial power stages where the 175 °C junction rating provides headroom under overload.

Total gate charge Qg is 80 nC at Vgs=10 V. The 2075 pF input capacitance at Vds=25 V sets the Miller plateau charge time; a driver with 2 A peak source/sink keeps the switching edges clean. The drive voltage window spans 4.5 V to 10 V — the 10.7 mOhm rating is specified at 10 V, but the part can be driven from a 5 V logic rail with higher Rds(on).

Housed in the PG-TO263-3-2 (D²Pak) surface-mount package, the large copper tab provides the primary thermal path to the PCB. Maximum power dissipation is 158 W at Tc=25 °C.

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Is IPB80N06S2L11ATMA2 RoHS compliant?

Compliance with environmental regulations is mandatory for many markets and applications.