Infineon OptiMOS™ N-Channel MOSFET, IPB80N06S209ATMA2, 55 V drain-source, 80 A continuous drain, 8.8 mOhm Rds(on) at 10 V, 190 W power dissipation, TO-263-3 (PG-TO263-3-2) surface-mount package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 190W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 125µA |
| Rds on (Max) @ id, vgs | 8.8mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 80 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2360 pF @ 25 V |
The TO-263-3 (D²Pak) package with an exposed tab handles the 190 W power dissipation — the tab is the thermal path, so the PCB copper area under it sets the real-world current ceiling.
Input capacitance is 2360 pF at 25 V drain-source.
The 175 °C ceiling is higher than the typical 150 °C limit on many power MOSFETs — useful if the thermal loop runs hot or the load is pulsed. The part is ROHS3 compliant.
The junction temperature range is -55 °C to 175 °C, suitable for automotive and industrial environments.
The IPD50R950CEAUMA1 is a CoolMOS™ N-channel MOSFET but at 500 V drain-source — a different voltage class and not a functional replacement.