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Infineon Technologies IPB80N06S209ATMA2
Infineon Technologies

IPB80N06S209ATMA2 OptiMOS N-Ch MOSFET, 55V, 80A, TO-263

MPNIPB80N06S209ATMA2
End of Life

Infineon OptiMOS™ N-Channel MOSFET, IPB80N06S209ATMA2, 55 V drain-source, 80 A continuous drain, 8.8 mOhm Rds(on) at 10 V, 190 W power dissipation, TO-263-3 (PG-TO263-3-2) surface-mount package, -55°C to 175°C junction temperature.

$2.63Ref. price · indicative, final on quote
IPB80N06S209ATMA2 datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPB80N06S209ATMA2 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation190W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 125µA
Rds on (Max) @ id, vgs8.8mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs80 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2360 pF @ 25 V

Product details

80 A, 55 V N-channel — the BOM-fit numbers

The TO-263-3 (D²Pak) package with an exposed tab handles the 190 W power dissipation — the tab is the thermal path, so the PCB copper area under it sets the real-world current ceiling.

Gate drive and switching profile

Gate charge is 80 nC at 10 V gate drive, with a ±20 V Vgs max rating that gives headroom for a 12 V gate-drive rail. Input capacitance is 2360 pF at 25 V drain-source.

Temperature range and environment

The 175 °C ceiling is higher than the typical 150 °C limit on many power MOSFETs — useful if the thermal loop runs hot or the load is pulsed. The part is ROHS3 compliant.

Frequently asked questions

What is the maximum operating temperature of IPB80N06S209ATMA2?

The junction temperature range is -55 °C to 175 °C, suitable for automotive and industrial environments.

What are the alternatives to IPB80N06S209ATMA2?

The IPD50R950CEAUMA1 is a CoolMOS™ N-channel MOSFET but at 500 V drain-source — a different voltage class and not a functional replacement.