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Infineon Technologies IPB80N04S404ATMA1

IPB80N04S404ATMA1 Infineon OptiMOS N-Ch 40V 80A MOSFET

MPNIPB80N04S404ATMA1
End of Life

Infineon OptiMOS series, N-channel MOSFET, 40 V drain-source, 80 A continuous drain, 4.2 mOhm Rds(on) at 10 V, 43 nC gate charge, TO-263-3 (D2Pak) surface mount, -55 to 175 °C junction.

$1.03844Ref. price · indicative, final on quote
Infineon Technologies IPB80N04S404ATMA1 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPB80N04S404ATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation71W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 35µA
Rds on (Max) @ id, vgs4.2mOhm @ 80A, 10V
Gate charge (Qg) (Max) @ vgs43 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3440 pF @ 25 V

Product details

40 V, 80 A N-channel — the conduction-loss floor

The IPB80N04S404ATMA1 is an Infineon OptiMOS N-channel MOSFET rated at 40 V drain-to-source and 80 A continuous drain at 25 °C case temperature. In a 40 V automotive or industrial power rail, this part keeps the I²R heat low enough that the TO-263-3 (D2Pak) footprint on a standard 2 oz copper board can dissipate 71 W at the case without forced air.

Gate charge and drive sizing

Gate charge Qg totals 43 nC at 10 V. For a 100 kHz switching stage, that works out to 4.3 mA average gate current — a standard 1 A driver has plenty of headroom.

175 °C junction — headroom for high-ambient environments

That headroom matters for under-hood automotive or industrial enclosures where ambient hits 105 °C and the self-heating from 80 A peaks pushes die temperature. The threshold voltage Vgs(th) max is 4 V at 35 µA drain, which keeps it fully enhanced with a standard 10 V gate rail.

ROHS3 compliant. No official second-source or drop-in replacement is listed in the Infineon cross-reference for this order code.

Frequently asked questions

What is the Rds(on) of IPB80N04S404ATMA1?

Maximum Rds(on) is 4.2 mOhm at 80 A drain current with 10 V gate drive. That value is the worst-case conduction loss spec at 25 °C junction; derate upward with temperature per the normalised curve in the datasheet.

Is IPB80N04S404ATMA1 lead-free?

Yes, it is ROHS3 compliant, which restricts lead and other hazardous substances.