80 A continuous drain, 30 V blocking — the power-stage workhorse
The Infineon IPB80N03S4L-03 is a CoolMOS™ N-channel power MOSFET in a surface-mount PG-TO263-3-2 (D²Pak) package. It is designed for automotive and industrial power switching where low conduction loss and high current density are required.
At 80 A, conduction loss is roughly 24 W — within the 94 W package limit, but the junction temperature rise against the 175°C maximum means the thermal interface and PCB copper area need attention. For designs that run at lower gate voltage, the 4.5 V drive rating (minimum for rated Rds(on)) is useful when the gate drive rail is 5 V, but the on-resistance will be higher — budget for it in the loss calculation.
Temperature range and automotive suitability
The -55°C to 175°C operating junction temperature covers automotive under-hood and industrial high-temperature environments. The description field flags this as an automotive-grade device (20V-40V N-CHANNEL AUT), which typically implies AEC-Q101 qualification, though the ledger does not explicitly list the AEC-Q number. The 175°C maximum junction allows headroom in a 105°C ambient under-hood compartment, provided the thermal path is managed.