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Infineon Technologies IPB70N10S3L12ATMA1
Infineon Technologies

Infineon IPB70N10S3L12ATMA1 N-Channel MOSFET, 100V, 70A

MPNIPB70N10S3L12ATMA1
End of Life

Infineon OptiMOS™ series, N-Channel MOSFET, 100 V drain-source, 70 A continuous drain at 25°C, 11.8 mOhm Rds(on) at 70 A and 10 V, 80 nC gate charge, -55°C to 175°C junction temperature, surface-mount TO-263-3 (D²Pak) package.

$2.85Ref. price · indicative, final on quote
IPB70N10S3L12ATMA1 datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPB70N10S3L12ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C70A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2.4V @ 83µA
Rds on (Max) @ id, vgs11.8mOhm @ 70A, 10V
Gate charge (Qg) (Max) @ vgs80 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5550 pF @ 25 V

Product details

Gate charge and switching frequency — sizing the driver

The IPB70N10S3L12ATMA1: Total gate charge is 80 nC at 10 V Vgs. The 11.8 mOhm Rds(on) is specified at 10 V drive; a 4.5 V logic-level drive is also supported for lower-voltage gate signals, though on-resistance will rise above the 10 V figure.

Temperature grade — full military range in a power package

Maximum power dissipation is 125 W at case temperature, with derating above 25°C per the datasheet's thermal curve — the D²Pak tab's solder pad area on the PCB sets the real thermal resistance.

Frequently asked questions

What is the Rds(on) of IPB70N10S3L12ATMA1?

Maximum on-resistance is 11.8 mOhm at 70 A drain current with 10 V gate-to-source voltage.

Is IPB70N10S3L12ATMA1 RoHS compliant?

Yes, it is ROHS3 compliant per the Infineon lifecycle record.