IPB70N04S406ATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS series, N-Channel MOSFET, 40 V drain-source, 70 A continuous drain at 25°C, 6.2 mOhm max Rds(on) at 10 V gate drive, TO-263-3 (D²Pak) surface-mount package, -55°C to 175°C junction temperature.

Infineon Technologies IPB70N04S406ATMA1
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[IN STOCK] In Stock: 5 pcs
$4.07/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPB70N04S406ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C70A (Tc)
Power dissipation58W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 26µA
Rds on (Max) @ id, vgs6.2mOhm @ 70A, 10V
Gate charge (Qg) (Max) @ vgs32 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2550 pF @ 25 V

Technical details

The IPB70N04S406ATMA1: The TO-263-3 (D²Pak) package dissipates 58 W at the case.

Gate charge and switching — 32 nC at 10 V

Total gate charge is 32 nC at 10 V. Input capacitance is 2550 pF at 25 V drain-source.

Temperature range and package — field-swap reality

On a rework station, you can swap it with a hot-air gun if the board has enough copper to sink heat; the tab is large enough that orientation is obvious (the tab is the big metal face). No lab bench needed, just a steady hand and a thermocouple to watch the board temp.

ROHS3 compliant.

IPB70N04S406ATMA1
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