It comes in the PG-TO263-3 (D2PAK) surface-mount package and carries AEC-Q101 qualification, making it suitable for automotive-grade power conversion stages — on-board chargers, DC-DC converters, and PFC circuits where the bus voltage sits at 400 V nominal and the ambient under-hood temperature reaches 150 °C junction.
660 mOhm on-resistance — conduction loss at the operating point
At the full 6 A rating, the conduction loss is I²R = 6² × 0.66 ≈ 23.8 W, which sits inside the 62.5 W power dissipation limit at case temperature but leaves a narrow margin for derating at elevated junction temperature — the datasheet's normalised Rds(on) curve will show the multiplier at 150 °C. The gate charge is 20 nC total at 10 V, and the input capacitance is 543 pF at 100 V drain-source. These numbers mean a standard gate driver with 1 A peak output can switch this part at 100 kHz with a few ns of rise time — no need for a high-current booster stage.
AEC-Q101 and the automotive bill of materials
For a BOM that needs a 650 V MOSFET in a D2PAK for an automotive ECU or a traction inverter auxiliary supply, the AEC-Q101 stamp is the gatekeeper for PPAP submission. The part is ROHS3 compliant.
Package and footprint — D2PAK rework considerations
The PG-TO263-3 (D2PAK) is a surface-mount package with two leads plus the tab. For rework, the large tab requires a preheat zone around 150 °C and a hot-air nozzle that covers the full body; a standard soldering iron on the leads alone will not reflow the tab joint.