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Infineon Technologies IPB65R420CFD

IPB65R420CFD CoolMOS N-Channel MOSFET, 650 V, 420 mOhm

MPNIPB65R420CFD
End of Life

Infineon CoolMOS™ IPB65R420CFD, N-Channel MOSFET, 650 V Vdss, 8.7 A Id, 420 mOhm Rds(on) @ 10 V, 31.5 nC Qg, TO-263-3 (D²Pak) surface mount, -55°C to 150°C.

$0.75Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPB65R420CFD Technical Specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8.7A (Tc)
Power dissipation83.3W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4.5V @ 300µA
Rds on (Max) @ id, vgs420mOhm @ 3.4A, 10V
Gate charge (Qg) (Max) @ vgs31.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds870 pF @ 100 V

Product details

In a 2 A offline flyback primary switch, that resistance contributes roughly 1.7 W of I²R loss at full load — within the 83.3 W package power dissipation ceiling, but the designer must account for the Rds(on) positive temperature coefficient when the junction climbs above 25°C.

Gate charge and switching loss budget

Total gate charge is 31.5 nC at 10 V, with an input capacitance of 870 pF measured at 100 V drain-source. For a hard-switched converter running at 100 kHz, the gate-driver current required to charge and discharge Qg in the dead time is about 3.15 mA average — well within the capability of a standard MOSFET driver IC. The low Qg relative to the 650 V class keeps crossover switching losses manageable, which matters for PFC stages and LLC converters where the MOSFET sees both hard turn-on and zero-voltage transitions.

Package and thermal interface

The part ships in a TO-263-3 (D²Pak) surface-mount package, supplier device code PG-TO263-3-2.

Lifecycle and compliance

It is ROHS3 compliant. No official second-source or pin-compatible alternate is listed in the manufacturer's cross-reference, so dual-sourcing would require qualification of a functionally equivalent CoolMOS or competitor device.

Frequently asked questions

What is the Rds(on) of IPB65R420CFD?

The maximum on-resistance is 420 mOhm at a drain current of 3.4 A and a gate-source voltage of 10 V.

What is the gate charge of IPB65R420CFD?

Total gate charge is 31.5 nC at a 10 V gate drive voltage.