IPB65R230CFD7AATMA1

Infineon Technologies · CoolMOS™ Series

Infineon CoolMOS™ IPB65R230CFD7AATMA1, N-Channel MOSFET, 650 V Vdss, 230 mOhm Rds(on) at 10 V, 11 A continuous drain, PG-TO263-3 package, -40 to 150 °C junction temperature.

Infineon Technologies IPB65R230CFD7AATMA1
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPB65R230CFD7AATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation63W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ id4.5V @ 260µA
Rds on (Max) @ id, vgs230mOhm @ 5.2A, 10V
Gate charge (Qg) (Max) @ vgs23 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1044 pF @ 400 V

Technical details

Input capacitance is 1044 pF at 400 V drain bias — a figure that directly influences the switching energy and the required gate-drive source/sink capability. The ±20 V maximum gate-to-source rating provides margin against ringing on the gate node; nominal is not absolute max, so keep the gate drive within the ±20 V limit even during transients.

Automotive qualification and thermal limits

Power dissipation is rated at 63 W at case temperature — that figure assumes an infinite heatsink; real-world derating follows the thermal resistance from junction to case, which the datasheet provides. The 4.5 V maximum gate threshold at 260 µA drain current is a cold-start consideration: at low temperature the threshold rises, so the gate-drive supply must still guarantee 10 V at the gate even with a cold MOSFET.

Package and mounting — PG-TO263-3

For the 63 W dissipation capability, the PCB layout must provide a low-thermal-resistance path — typically a multi-layer board with thermal vias under the tab.

IPB65R230CFD7AATMA1
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