Infineon CoolMOS™ C7, N-Channel MOSFET, 650 V Vds, 13 A Id, 190 mOhm Rds(on) at 10 V, 23 nC Qg, D²Pak-3 (TO-263) surface mount, -55 to 150 °C Tj.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ C7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 13A (Tc) |
| Power dissipation | 72W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 290µA |
| Rds on (Max) @ id, vgs | 190mOhm @ 5.7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 23 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1150 pF @ 400 V |
IPB65R190C7ATMA2 total gate charge is 23 nC at 10 V, with input capacitance Ciss of 1150 pF at 400 V Vds.
Supplied in a TO-263-3 (D²Pak) surface-mount package with the supplier device code PG-TO263-3.
Determines power loss and thermal performance in the circuit.
Affects long-term availability and suitability for new designs.
Directs buyers to authorized distributors for genuine parts.
Ensures mechanical compatibility with PCB layout and soldering process.
Helps choose the right part for cost or performance optimization.
Critical for ensuring voltage margins in the application.