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Infineon Technologies IPB65R099CFD7AATMA1

IPB65R099CFD7AATMA1 MOSFET N-CH 650V 24A TO263-3, 99mOhm

MPNIPB65R099CFD7AATMA1
End of Life

Infineon CoolMOS™ CFD7A series, IPB65R099CFD7AATMA1, N-channel MOSFET, 650 V Vdss, 24 A continuous drain, 99 mOhm Rds(on) at 10 V, PG-TO263-3 surface-mount package, -40°C to 150°C junction temperature.

$8.48Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101, CoolMOS™ CFD7A
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPB65R099CFD7AATMA1 specifications
ParameterValue
SeriesAutomotive, AEC-Q101, CoolMOS™ CFD7A
FET typeN-Channel
MountingSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C24A (Tc)
Power dissipation127W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4.5V @ 630µA
Rds on (Max) @ id, vgs99mOhm @ 12.5A, 10V
Gate charge (Qg) (Max) @ vgs53 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2513 pF @ 400 V

Product details

At 10 V Vgs the maximum Rds(on) is 99 mOhm, measured at 12.5 A drain current. Total gate charge is 53 nC at 10 V.

Junction temperature range spans -40°C to 150°C. Maximum power dissipation is 127 W at case temperature.

The PG-TO263-3 (D²Pak) is a surface-mount package with two leads plus the tab as the drain connection. The large copper tab provides a low thermal resistance path to the PCB; a proper via-stitched landing pad under the tab is expected for designs that approach the 24 A continuous rating.

It is RoHS3 compliant.

Frequently asked questions

What is the Rds(on) of IPB65R099CFD7AATMA1 at 10V Vgs?

The maximum Rds(on) is 99 mOhm at 10 V gate drive, measured at 12.5 A drain current.

Is IPB65R099CFD7AATMA1 RoHS compliant?

Yes, it is RoHS3 compliant.