650 V class for offline power stages
The IPB65R095C7ATMA2: N-channel 650 V, 24 A CoolMOS C7 MOSFET with 95 mOhm Rds(on) at 10 V.
Gate charge and switching loss trade-off
Total gate charge is 45 nC at 10 V. Input capacitance is 2140 pF at 400 V drain bias.
Package and thermal path
Housed in the PG-TO263-3 (D2PAK) surface-mount package with two leads plus a tab. Board-level thermal design must couple the tab to a copper pour on the PCB; the junction-to-ambient thermal resistance depends on the copper area, not just the package rating.
Lifecycle and compliance
ROHS3 compliant.
