Infineon CoolMOS™ C7 series, N-Channel MOSFET, 650 V drain-to-source voltage, 33 A continuous drain current at 25°C, 65 mOhm on-resistance at 10 V gate drive, surface-mount TO-263-3 (D²Pak) package, -55°C to 150°C junction temperature range.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ C7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 33A (Tc) |
| Power dissipation | 171W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4.5V @ 200µA |
| Rds on (Max) @ id, vgs | 65mOhm @ 17.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 64 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3020 pF @ 400 V |
The IPB65R065C7ATMA2: ROHS3 compliance is confirmed.
The TO-263-3 (D²Pak) surface-mount package has two leads plus a large tab that serves as the drain connection and the primary thermal path. The supplier device package is PG-TO263-3.
The maximum on-resistance is 65 mOhm at a 10 V gate drive, measured at 17.1 A drain current.
Yes, the part is ROHS3 compliant.